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IDT71V65603S100PFI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100PFI

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 9MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V65603S100PFI8

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 9MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    IDT71V65603S100PFI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    卷帶（TR）

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR（ZBT）

  • 存儲(chǔ)容量：

    9Mb（256K x 36）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商器件封裝：

    100-TQFP（14x14）

  • 描述：

    IC SRAM 9MBIT PARALLEL 100TQFP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
8
全新原裝!優(yōu)勢(shì)庫存熱賣中!
 詢價(jià)
IDT
23+
100TQFP
9526
詢價(jià)
IDT
QFP100
3162
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IDT
24+
100-TQFP
4355
原裝現(xiàn)貨
 詢價(jià)
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IDT
21+
100TQFP
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IDT
23+
100TQFP
9000
原裝正品，支持實(shí)單
 詢價(jià)
更多IDT71V65603S100PFI供應(yīng)商 更新時(shí)間2024-12-21 16:20:00

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