首頁 >IDT71V67703S75PF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT71V67703S75PF | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect | IDT Integrated Device Technology, Inc. | IDT | |
IDT71V67703S75PF | 包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect | IDT Integrated Device Technology, Inc. | IDT | ||
包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號:
IDT71V67703S75PF
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR
- 存儲容量:
9Mb(256K x 36)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
3.135V ~ 3.465V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
100-LQFP
- 供應(yīng)商器件封裝:
100-TQFP(14x14)
- 描述:
IC SRAM 9MBIT PARALLEL 100TQFP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
100-TQFP(14x14) |
1389 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢! |
詢價(jià) | ||
IDT |
23+ |
100TQFP |
9526 |
詢價(jià) | |||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INTEGRATEDDE |
23+ |
65480 |
詢價(jià) | ||||
IDT, Integrated Device Technol |
21+ |
100-TQFP(14x14) |
56200 |
一級代理/放心采購 |
詢價(jià) | ||
IDT |
20+ |
QFP-100 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
IDT |
23+ |
QFP-100P |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IDT |
21+ |
QFP-100P |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IDT |
22+ |
100TQFP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IDT |
2022 |
QFP-100P |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) |
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