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首頁(yè) >IE430F>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IQXO-430	文件：217.58 Kbytes Page：2 Pages	CrystalClockOscillatorSpecification	IQD IQD Frequency Products Ltd	IQD
IRF430	文件：211.24 Kbytes Page：5 Pages	N-CHANNELPOWERMOSFETS FEATURES ?LowRDs(on)athighvoltage ?Improvedinductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapactiance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablitiy ?TO-3package(Highvol	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
IRF430	文件：141.08 Kbytes Page：6 Pages	N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF430	文件：21.34 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRF430	文件：146.28 Kbytes Page：7 Pages	TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi	IRF International Rectifier	IRF
IRF430	文件：56.66 Kbytes Page：7 Pages	4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET 4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa	Intersil Intersil Corporation	Intersil
IRF430	文件：153.46 Kbytes Page：3 Pages	4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF430	文件：122.44 Kbytes Page：3 Pages	N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF430	文件：122.44 Kbytes Page：3 Pages	N-ChannelPowerMOSFETs,4.5A,450V/500V	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF430	文件：48.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFE430	文件：129.12 Kbytes Page：8 Pages	HEXFETTRANSISTOR 500Volt,1.50?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpa	IRF International Rectifier	IRF
IRFE430	文件：169.26 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF430	文件：133.05 Kbytes Page：7 Pages	HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe	IRF International Rectifier	IRF
IRFF430	文件：325.25 Kbytes Page：7 Pages	2.75A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFF430	文件：23.73 Kbytes Page：2 Pages	N??HANNELENHANCEMENT FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS	SEME-LAB Seme LAB	SEME-LAB
IRFF430	文件：96.08 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFR430A	文件：118.1 Kbytes Page：10 Pages	SMPSMOSFET	IRF International Rectifier	IRF
IRFR430A	文件：158.34 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR430A	文件：2.67839 Mbytes Page：7 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR430A	文件：2.318 Mbytes Page：7 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市佳杰偉業(yè)科技有限公司	IE430F	HUIRECORDON	2306+		11530	優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨	詢價(jià)
深圳市粵科源興科技有限公司	IE430F	Huirecordon	13+		12788	原裝分銷	詢價(jià)
深圳市華斯頓科技有限公司	IE430F	Huirecordon原裝	22+23+	DIP	33447	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IE4803D	XP	23+	DIP8	28668	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市恒佳微電子有限公司	IE4803D	XP	2021+	DIP	11000	十年專營(yíng)原裝現(xiàn)貨,假一賠十	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	IE4805SH	I	21+	DIP4	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市拓億芯電子有限公司	IE4809D	XP	23	DIP	55000	原廠渠道原裝正品假一賠十	詢價(jià)

更多IE430F供應(yīng)商更新時(shí)間2025-1-11 10:51:00

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