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IRFN450

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

IRFN450

POWERMOSFETSURFACEMOUNT(SMD-1)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

IRFN450

SimpleDriveRequirements

IRF

International Rectifier

IRFP450

N-CHANNEL500V-0.33ohm-14A-TO-247PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRFP450

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP450

14A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP450

StandardPowerMOSFET-N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IRFP450

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP450

PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A)

IRF

International Rectifier

IRFP450

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IF450

  • 制造商：

    INTERFET

  • 制造商全稱：

    INTERFET

  • 功能描述：

    N-Channel Silicon Junction Field-Effect Transistor

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155
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11000
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17035
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更多IF450供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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