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IFRU320PBF

HEXFET Power MOSFET

IRF

International Rectifier

IFW320

EasynetworksetupwithNetworkAddressTranslation(NAT)

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

IPC-320

CompactSizeTowerIPCwith12thGenIntel?Core?iCPUSocket(LGA1700)and250WPSU

Features ?Intel?12thgenerationCore?i9/i7/i5/i3&Pentium?/Celeron?processor withH610Echipset ?DesignforoperatorIPCandapplicationwithspacelimit ?DualUSB3.2anddualUSB2.0portonbothfrontandrearside ?DualIndependentDisplay(HDMI/DP) ?2lowprofileExpansionslo

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

IRF320

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF320

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF320

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. ?LowRDs(on) ?VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF320

StaticDrain-SourceOn-Resistance

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF320

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF320

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF320LSPBF

HEXFET?PowerMOSFET

VDSS=55V RDS(on)=8.0m? ID=110A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE

IRF

International Rectifier

IRFD320

0.5A,400V,1.800Ohm,N-ChannelPowerMOSFET

Description ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

Intersil

Intersil Corporation

IRFD320

PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=0.49A)

VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD320

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD320

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD320PBF

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=0.49A)

VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD320PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE320

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE320

SimpleDriveRequirements

IRF

International Rectifier

IRFF320

2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET

2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF320

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-state

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IFRU320PBF

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    HEXFET Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
23+
TO-251
2000
專做原裝正品,假一罰百!
 詢價
IR
22+
TO-251
4500
全新原裝品牌專營
 詢價
IR
22+
.
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
.
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
.
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
.
7000
詢價
XP Power
24+
N/A
12000
一級代理保證進(jìn)口原裝正品假一罰十價格合理
 詢價
TAMURA
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
TAMURA
23+
490
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多IFRU320PBF供應(yīng)商 更新時間2025-1-14 9:34:00

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