首頁 >IFS244>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IFS244 | Package:圓柱形,有螺紋 - M12;包裝:散裝 類別:傳感器,變送器 接近傳感器 - 工業(yè) 描述:INDUCTIVE SENSOR; M12 X 1 / L = | ifm efector, inc. ifm efector, inc. | ifm efector, inc. | |
14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
StaticDrain-SourceOn-Resistance | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=15A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsth | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=16A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
產(chǎn)品屬性
- 產(chǎn)品編號:
IFS244
- 制造商:
ifm efector, inc.
- 類別:
傳感器,變送器 > 接近傳感器 - 工業(yè)
- 包裝:
散裝
- 傳感器類型:
電感
- 感應距離:
0.157"(4mm)
- 輸出類型:
PNP-NO,3 線
- 屏蔽:
無屏蔽
- 材料 - 基體:
鍍鎳黃銅
- 電壓 - 供電:
10V ~ 30V
- 端接樣式:
連接器
- 工作溫度:
-40°C ~ 85°C
- 侵入防護:
IP65,IP66,IP67,IP68,IP69K
- 指示燈:
LED
- 封裝/外殼:
圓柱形,有螺紋 - M12
- 描述:
INDUCTIVE SENSOR; M12 X 1 / L =
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
L3 Narda-MITEQ |
24+ |
- |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
APM |
1535+ |
800 |
詢價 | ||||
APM |
23+ |
800 |
全新原裝,歡迎來電咨詢 |
詢價 | |||
INFINEON |
2016+ |
模塊 |
985 |
只做原裝現(xiàn)貨!或訂貨! |
詢價 | ||
Infineon/英飛凌 |
21+ |
- |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
- |
10000 |
原裝,品質(zhì)保證,請來電咨詢 |
詢價 | ||
Infineon/英飛凌 |
2021+ |
- |
9600 |
原裝現(xiàn)貨,歡迎詢價 |
詢價 | ||
Infineon/英飛凌 |
2023+ |
- |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
Infineon/英飛凌 |
23+ |
- |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
21+ |
- |
6820 |
只做原裝,質(zhì)量保證 |
詢價 |
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