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IXFE48N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?Fastintrins

IXYS

IXYS Corporation

IXFH48N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK48N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK48N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK48N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS?process UnclampedInductiveSwitching(UIS

IXYS

IXYS Corporation

IXFK48N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK48N50Q

HiPerFETPowerMOSFETsQ-CLASS

HiPerFET?PowerMOSFETsQ-CLASSSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQgHighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on)

IXYS

IXYS Corporation

IXFN48N50

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFN48N50

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage -VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·Synchronousrectification ·Batterychargers ·Switched-modeandresonant-modepowersupplies

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFN48N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN48N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS?process UnclampedInductiveSwitching(UIS

IXYS

IXYS Corporation

IXFN48N50Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFN48N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Internationalst

IXYS

IXYS Corporation

IXFR48N50Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET?PowerMOSFETsISOPLUS247?,Q-Class(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXYS

IXYS Corporation

IXFR48N50Q

HiPerFETPowerMOSFETsISOPLUS247,Q-Class

IXYS

IXYS Corporation

IXFX48N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX48N50Q

HiPerFETPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

SMOS48N50

PowerMOSFETs

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SMOS48N50

POWERMOSFETS

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詳細(xì)參數(shù)

  • 型號(hào)：

    IFXN48N50Q

  • 制造商：

    IXYS Corporation

  • 功能描述：

    IFXN Series Single N-Channel 200 Vds 0.1 Ohm 60 nC 520 W Power Mosfet - SOT-227B

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Industrial
1931+
N/A
18
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 詢價(jià)
Industrial
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
金升陽(yáng)
900
詢價(jià)
IR
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
IR
TO-263
22+
6000
十年配單,只做原裝
 詢價(jià)
IR
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
23+
TO-263
8400
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
MAKOSEMI
23+
SMA
800004020
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更多IFXN48N50Q供應(yīng)商 更新時(shí)間2025-1-20 10:20:00

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