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IGB50N65

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.7V@IC=50A ·HighSpeedSmoothSwitchingDeviceForHard &SoftSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IGB50N65H5

High speed switching series fifth generation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGB50N65S5

High speed switching series fifth generation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BIDW50N65T

BIDW50N65TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns?ModelBIDW50N65TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Electronic Solutions

伯恩斯

FGW50N65WE

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=50A ·HighCurrentCapability ·HighInputImpedance APPLICATIONS ·SolarConverters ·UninterruptedPowerSupply ·UPS,PFC ·WeldingConverters

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

HMG50N65T

650V/50ATrenchFieldStopIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

MIW50N65F

TrenchandFieldStopIGBT650V50A

Features ?HighSpeedSmoothSwitchingDeviceforHardandSoftSwitching ?Vce(sat)withPositiveTemperatureCoefficient ?HighRuggedness,GoodThermalStability ?VeryTightParameterDistribution ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?Lead

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MIW50N65F-BP

TrenchandFieldStopIGBT650V50A

Features ?HighSpeedSmoothSwitchingDeviceforHardandSoftSwitching ?Vce(sat)withPositiveTemperatureCoefficient ?HighRuggedness,GoodThermalStability ?VeryTightParameterDistribution ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?Lead

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MPBW50N65EH

EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVCEsat

Features Easyparallelswitchingcapabilitydueto positivetemperaturecoefficientinVCEsat LowVCEsat,fastswitching Highruggedness,goodthermalstability Verytightparameterdistribution TrenchandFieldStopIGBT Applications UPS PFC

FS

First Silicon Co., Ltd

RLPGB50N65CT

N-ChannelIGBT

APPLICATIONS ?Generalpurposeinverters ?UPS ?MotorControl FEATURES ?Lowgatecharge ?TrenchFSTechnology, ?RoHSproduct

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon Technologies
21+
PG-TO263-3
1000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
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Infineon
1931+
N/A
493
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Infineon(英飛凌)
2112+
PG-TO263-3
115000
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Infineon Technologies
21+
TO-263-3
5000
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INFINEON
1809+
SMD
1675
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Infineon/英飛凌
21+
PG-TO263-3
8800
公司只作原裝正品
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Infineon/英飛凌
21+
PG-TO263-3
6000
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Infineon/英飛凌
21+
PG-TO263-3
10000
原裝,品質(zhì)保證,請(qǐng)來(lái)電咨詢(xún)
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Infineon
22+
NA
493
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Infineon/英飛凌
2021+
PG-TO263-3
9600
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更多IGB50N65供應(yīng)商 更新時(shí)間2024-12-23 13:45:00