首頁 >IIPD60R180C7>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IIPD60R180C7 | N-Channel MOSFET Transistor ?DESCRITION ?Suitableforhardandsoftswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.18? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-ChannelMOSFETTransistor ?DESCRIPTION ?CombinestheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.18? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevic | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤180m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Features ?Suitableforhardandsoftswitching(PFCandhighperformanceLLC) ?IncreasedMOSFETdv/dtruggednessto120V/ns ?IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg ?BestinclassRDS(on)/package ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600VCoolMOS?C7PowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Suitableforhardandsoftswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.18? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?CombinestheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.18? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevic | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤180m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
N/A |
2023+ |
SOP8 |
50000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
22+ |
DIP |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
DIP |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
DIP |
7000 |
詢價(jià) | |||
IOR |
23+24 |
SIP |
9860 |
原廠原包裝。終端BOM表可配單??砷_13%增值稅 |
詢價(jià) | ||
INFINEON |
24+ |
con |
100 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index |
詢價(jià) | ||
VISHAY |
12+ |
TO-252 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
VISHAY/威世 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
ifm electronic |
7162+ |
con |
5 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格 |
詢價(jià) |
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