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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IIPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPP120N20NFD	文件：1.30327 Mbytes Page：12 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings	IXYS IXYS Corporation	IXYS
IXFK120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio	IXYS IXYS Corporation	IXYS
IXFK120N20	文件：328.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK120N20P	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK120N20P	文件：135.75 Kbytes Page：5 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFK120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings	IXYS IXYS Corporation	IXYS
IXFN120N20	文件：535.83 Kbytes Page：3 Pages	N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFN120N20	文件：69.86 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess	IXYS IXYS Corporation	IXYS
IXFR120N20	文件：34.51 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247 HiPerFET?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?SiliconChiponDirect-CopperBond(DCB)Substrate ?IsolatedMountingSurface ?2500V~ElectricalIsolation ?AvalancheRated ?FastIntrinsicRectifier ?Lo	IXYS IXYS Corporation	IXYS
IXFR120N20	文件：180.52 Kbytes Page：3 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFR120N20	文件：372.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX120N20	文件：367.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio	IXYS IXYS Corporation	IXYS
IXTK120N20P	文件：196.99 Kbytes Page：5 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Corporation	IXYS
IXTK120N20P	文件：295.11 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXTQ120N20P	文件：301 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXTQ120N20P	文件：196.99 Kbytes Page：5 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Corporation	IXYS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市宏捷佳電子科技有限公司	IIPS15HISO	N/A	2023+	SOP8	50000	全新原裝現(xiàn)貨	詢價(jià)
深圳市河鋒鑫科技有限公司	IIR2153PBF	IR	22+	DIP	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IIR2153PBF	IR	23+	DIP	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IIR2153PBF	IR	23+	DIP	7000		詢價(jià)
深圳市柯爾基電子有限公司	IIR3101	IOR	23+24	SIP	9860	原廠原包裝。終端BOM表可配單?？砷_13%增值稅	詢價(jià)
北京京北通宇電子元件有限公司	IIRF520NPBF	INFINEON	24+	con	10000	查現(xiàn)貨到京北通宇商城	詢價(jià)
深圳市勤思達(dá)科技有限公司	IIRFR9220TRLPBF	VISHAY	12+	TO-252	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市鼎欣微電子有限公司	IIRFR9220TRLPBF	VISHAY/威世	21+	TO-252	30000	只做正品原裝現(xiàn)貨	詢價(jià)
深圳市永貝爾科技有限公司	IIRLR3105	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市原品電子科技有限公司	IIS210	IFM	23+	SENSOR	128	全新、原裝	詢價(jià)

更多IIPP120N20NFD供應(yīng)商更新時(shí)間2025-1-20 10:34:00

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