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IIPW90R1K2C3

N-Channel MOSFET Transistor

DESCRITION ?Highpeakcurrentcapability FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPA90R1K2C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPD90R1K2C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA90R1K2C3

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA90R1K2C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD90R1K2C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD90R1K2C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI90R1K2C3

CoolMOS??PowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP90R1K2C3

CoolMOS??PowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW90R1K2C3

N-ChannelMOSFETTransistor

DESCRITION ?Highpeakcurrentcapability FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPW90R1K2C3

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應商型號品牌批號封裝庫存備注價格
IR
22+
DIP
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
DIP
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
DIP
7000
詢價
IOR
23+24
SIP
9860
原廠原包裝。終端BOM表可配單?？砷_13%增值稅
 詢價
INFINEON
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
VISHAY
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
VISHAY/威世
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IFM
23+
SENSOR
128
全新、原裝
 詢價
ST意法
20+
LGA12
17000
加速度計,只做全新原裝
 詢價
更多IIPW90R1K2C3供應商 更新時間2025-1-2 14:00:00

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