首頁(yè) >IKQ100N60T>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IKQ100N60T | 600V low loss switching series third generation | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
600V low loss switching series third generation | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
包裝:管件 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V TO247-3 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
包裝:管件 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT TRENCH/FS 600V 160A TO247-3 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
10VDriveNchMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
N-ChannelEnhancementModePowerMOSFET Description TheRM100N60DFusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=65V,ID=95A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET Description TheRM100N60DFVusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=65V,ID=95A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET Description TheRM100N60HDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=60V,ID=100A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET Description TheRM100N60LDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=65V,ID=100A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Kelvinconnectionforreducedgatenoise ?Materialcategorization:fordefinitionsofcomplianc | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-247 |
1076 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價(jià) | ||
英飛凌 |
新批次 |
N/A |
1500 |
詢價(jià) | |||
Infineon(英飛凌) |
2023+ |
TO-247-3-46 |
4550 |
全新原裝正品 |
詢價(jià) | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
INFINEON |
17+ |
TO-247 |
28115 |
進(jìn)口管盒現(xiàn)貨/30/240 |
詢價(jià) | ||
三年內(nèi) |
1983 |
納立只做原裝正品13590203865 |
詢價(jià) | ||||
INFINEON |
23+ |
TO-247 |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
Infineon(英飛凌) |
2112+ |
PG-TO247-3-46 |
115000 |
240個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
INFINEON |
22+ |
N/A |
51800 |
優(yōu)勢(shì)價(jià)格原裝現(xiàn)貨提供BOM一站式配單服務(wù) |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
PG-TO247-3-46 |
8800 |
公司只作原裝正品 |
詢價(jià) |
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