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8933

50VCERAMICDISC

NTE

NTE Electronics

ACT8933

AdvancedPMUforCoreLogicLUCY

ACTIVE-SEMI

Active-Semi, Inc

ACT8933

AdvancedPMUforCoreLogicLUCY

ACTIVE-SEMI

Active-Semi, Inc

CEM8933

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=140mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM8933AJPT

DualP-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT4.6Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CHENMKOchenmko

力勤股份有限公司

EN8933A

General-PurposeSwitchingDeviceApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

L8933

CWLASERDIODES

CWLASERDIODES Highopticalpowerfromasinglechip FEATURES ●Highopticalpower&highradiantfluxdensity(CW) L8933series:0.5W/50μm L8446series:1W/100μm L8763series:1W/50μm L8828series:2W/100μm ●Highstability ●Longlife ●Compact

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學(xué)株式會(huì)社

PD8933

InGaAsAVALANCHEPHOTODIODES

DESCRIPTION PD8XX3seriesareInGaAsavalanchephotodiodewhichhasasensitiveareaofφ35μm,PD8XX3issuitableforreceivingthelighthavingawavelengthbandof1000to1600nm.Thisphotodiodefeatureslownoise,ahighquantumefficiencyandahighspeedresponseissuitableforthelight

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

SGM8933

Rail-to-RailOutputOperationalAmplifiers

SGMICROSG Micro Corp

圣邦股份圣邦微電子（北京）股份有限公司

TDA8933

Class-Daudioamplifier

Generaldescription TheTDA8933isahighefficiencyclass-Damplifierwithlowpowerdissipation.Thecontinuoustimeoutputpoweris2×10Winastereohalfbridgeapplication(RL=8?)or1×20Winamonofullbridgeapplication(RL=16?).Duetothelowpowerdissipationthedeviceca

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

TDA8933B

ClassDaudioamplifier

TheTDA8933Bisahigh-efficiencyclassDamplifierwithlowpowerdissipation. Thedevicehastwofulldifferentialinputsdrivingtwoindependentoutputs.Itcanbeusedinamonofull-bridgeconfiguration(Bridge-TiedLoad(BTL))orasstereohalf-bridgeconfiguration(Single-Ended(SE)).

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

TDA8933BTW

ClassDaudioamplifier

TheTDA8933Bisahigh-efficiencyclassDamplifierwithlowpowerdissipation. Thedevicehastwofulldifferentialinputsdrivingtwoindependentoutputs.Itcanbeusedinamonofull-bridgeconfiguration(Bridge-TiedLoad(BTL))orasstereohalf-bridgeconfiguration(Single-Ended(SE)).

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

TDA8933T

Class-Daudioamplifier

Generaldescription TheTDA8933isahighefficiencyclass-Damplifierwithlowpowerdissipation.Thecontinuoustimeoutputpoweris2×10Winastereohalfbridgeapplication(RL=8?)or1×20Winamonofullbridgeapplication(RL=16?).Duetothelowpowerdissipationthedeviceca

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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24+
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20
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INF
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2000
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2011+
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20000
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23+
10000
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新
664
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64000
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10+
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7800
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2000
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5000
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19960
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更多IL8933供應(yīng)商 更新時(shí)間2025-1-9 16:30:00

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