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IRF540

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead(Pb)-freeAvailable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF540

N-ChannelPowerMOSFET

DESCRIPTION ·DrainCurrent–ID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=77mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedespeciallyforhi

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF540A

AdvancedPowerMOSFET

Features ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175OperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF540A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

IRF540A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF540D

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540F

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540FI

N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET

N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF540FI

iscN-ChannelMosfetTransistor

DESCRITION Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF540I

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

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23+
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8927
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1007
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2016+
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6523
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24+
DIP
2560
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23+
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5000
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2447
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100500
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10000
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10000
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更多ILX540K供應(yīng)商 更新時(shí)間2025-3-30 20:49:00