首頁(yè)>IMLT65R026M2H>規(guī)格書詳情

IMLT65R026M2H中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書

IMLT65R026M2H
廠商型號(hào)

IMLT65R026M2H

功能描述

SiC MOSFET CoolSiC? MOSFET 650 V G2

文件大小

1.20399 Mbytes

頁(yè)面數(shù)量

19 頁(yè)

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡(jiǎn)稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-29 11:06:00

IMLT65R026M2H規(guī)格書詳情

Features

? Ultra?low switching losses

? Benchmark gate threshold voltage, VGS(th) = 4.5 V

? Robust against parasitic turn?on even with 0 V turn?off gate voltage

? Flexible driving voltage and compatible with bipolar driving scheme

? Robust body diode operation under hard commutation events

? .XT interconnection technology for best?in?class thermal performance

Benefits

? Enables high efficiency and high power density designs

? Facilitates great ease of use and integration

?Provides the best price performance ratio compared to Industry’s most

ambitious roadmaps

? Reduces the size, weight and bill of materials of the systems

? Enhances system robustness and reliability

Potential applications

? SMPS

? Solar PV inverters

? Energy storage and battery formation

? UPS

? EV charging infrastructure

? Motor drives

Product validation

Fully qualified according to JEDEC for Industrial Applications

Please note: The source and driver source pins are not exchangeable. Their

exchange might lead to malfunction.

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