IN24LC08D中文資料INTEGRAL數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active currents of only 5μA and 1mA respectively. The IN24LC04/08 also has a page-write capability for up to 16 bytes of data. The IN24LC04B/08B is available in the standard 8-pin DIP.

FEATURES

? Single supply with operation down to 2.5V

? Low power CMOS technology

- 1 mA active current typical

- 10 μA standby current typical at 5.5V

- 5 μA standby current typical at 3.0V

? Organized as two or four blocks of 256 bytes (2x256x8) and (4x256x8)

? Two wire serial interface bus, I2C compatible

? Schmitt trigger, filtered inputs for noise suppression

? Output slope control to eliminate ground bounce

? 100 kHz (2.5V) and 400 kHz (5V) compatibility

? Self-timed write cycle (including auto-erase)

? Page-write buffer for up to 16 bytes

? 2 ms typical write cycle time for page-write

? Hardware write protect for entire memory

? Can be operated as a serial ROM

? Factory programming (QTP) available

? ESD protection > 4,000V

? 1,000,000 ERASE/WRITE cycles guaranteed*

? Data retention > 200 years

? 8-pin DIP

? Temperature range -40 to +85 oC