零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
420WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
420WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
IntegratedPowerSystemandRemoteManagementPackage Features ??Accessreal-timebatteryinforemotelywithoutclientPC ??Nocomplicatedsettingandcablerouting ??Fastchargingbatteryreduceswaitingtime ??ITandmedicalcertifiedforsafeuse ??Substantialchargecapacitywith2000+chargingtimes ??Highpowercapacitiesandlowpo | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
420WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
PyroelectricInfraredSensors | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
DualTypePyroelectricInfraredSensor | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
2.2Aand2.5A,450Vand500V,3.0and4.0Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforappli | Intersil Intersil Corporation | Intersil | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-ChannelPowerMOSFETs,3.0A,450V/500V
| FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·lowdriverequirements ·easeofparalleling APPLICATIONS ·highspeedapplicationssuchasSwitchingpowersupplies,ACandDCmotorcontrolsrelayandsolenoiddriver. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
2.2Aand2.5A,450Vand500V,3.0and4.0Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=0.37A) VDSS=500V RDS(on)=3.0? ID=0.37A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)500 RDS(on)(Ω)VGS=10V3.0 Qg(Max.)(nC)24 Qgs(nC)3.3 Qgd(nC)13 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET VDS(V)500 RDS(on)(Ω)VGS=10V3.0 Qg(Max.)(nC)24 Qgs(nC)3.3 Qgd(nC)13 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
1.6A,500V,3.000Ohm,N-ChannelPowerMOSFET 1.6A,500V,3.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil |
詳細參數(shù)
- 型號:
IN420CF
- 制造商:
Hubbell Wiring Device-Kellems
- 功能描述:
PS, IEC, REPL, INTERIOR, 4W, 20A
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ENERGIZER |
23+ |
NA |
39960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
DIODES |
2020+ |
DO-35 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢! |
詢價 | ||
DIODES |
23+ |
DO-35 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
DIODES |
23+ |
DO-35 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
24+ |
SMD |
3200 |
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電! |
詢價 | |||
ST |
22+ |
DIPSMD |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價 | ||
ST |
24+ |
DIPSMD |
200000 |
原裝進口正口,支持樣品 |
詢價 | ||
PHILIPS/飛利浦 |
NA |
1724 |
專營CANCDIP |
詢價 | |||
N/A |
4026 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
VISHAYMAS |
22+23+ |
DO-35 |
51128 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 |
相關(guān)規(guī)格書
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