零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CrystalClockOscillatorSpecification | IQD IQD Frequency Products Ltd | IQD | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRDs(on)athighvoltage ?Improvedinductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapactiance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablitiy ?TO-3package(Highvol | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi | IRF International Rectifier | IRF | ||
4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET 4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFETTRANSISTOR 500Volt,1.50?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpa | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRF International Rectifier | IRF | ||
2.75A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
N??HANNELENHANCEMENT FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
SMPSMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細參數(shù)
- 型號:
IN430CM
- 制造商:
Hubbell Wiring Device-Kellems
- 功能描述:
PS, IEC, REPL, INTERIOR, 4W, 30A
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
22+ |
DIPSMD |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術支持! |
詢價 | ||
ST |
24+ |
DIPSMD |
200000 |
原裝進口正口,支持樣品 |
詢價 | ||
PHILIPS/飛利浦 |
NA |
1724 |
專營CANCDIP |
詢價 | |||
N/A |
4026 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
VISHAYMAS |
22+23+ |
DO-35 |
51128 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
N/A |
21+ |
35200 |
一級代理/放心采購 |
詢價 | |||
24+ |
SOD-123 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
VISHAY/威世 |
21+ |
DO-35 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
VISHAY |
23+ |
DO-35 |
46028 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術 |
詢價 | ||
SOT |
21+ |
DIODES |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 |
相關規(guī)格書
更多- IN430DF
- IN430FS1
- IN4371AJ
- IN4372A1
- IN4372A1JTX
- IN4372A1SX
- IN4436/F/T
- IN4454-1JX
- IN44780U
- IN4575
- IN4587R
- IN4588R
- IN4589R
- IN4590R
- IN460CFS
- IN460CMS
- IN460DFS
- IN460DMS
- IN460FS2
- IN472-3N
- IN4729A
- IN4730A
- IN4732A
- IN4734A
- IN4736A
- IN4738A
- IN4740A
- IN4742A
- IN4743A
- IN4745A
- IN4746A
- IN4748A
- IN4750A
- IN4752A
- IN4754A
- IN4756
- IN4757A
- IN4759A
- IN4761A
- IN4763A
- IN4933
- IN4935
- IN4936GP-E3/73
- IN4938J
- IN4942
相關庫存
更多- IN430DM
- IN4371A
- IN4371AJAN
- IN4372A1JANTX
- IN4372A1JX
- IN4372D
- IN4453
- IN44780
- IN4574A
- IN4587
- IN4588
- IN4589
- IN4590
- IN460CF
- IN460CM
- IN460DF
- IN460DM
- IN460FS1
- IN472-3DW
- IN4728A
- IN4730
- IN4731A
- IN4733A
- IN4735A
- IN4737A
- IN4739A
- IN4741A
- IN4742AF
- IN4744A
- IN4746
- IN4747A
- IN4749A
- IN4751A
- IN4753A
- IN4755A
- IN4756A
- IN4758A
- IN4760A
- IN4762A
- IN4764A
- IN4934
- IN4936
- IN4937
- IN4938JAN
- IN4946