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IN4I57中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

IN4I57
廠商型號(hào)

IN4I57

功能描述

MECHANICAL CHARACTERISTICS

文件大小

104.68 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡(jiǎn)稱

NJSEMI新澤西半導(dǎo)體

中文名稱

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 23:00:00

IN4I57規(guī)格書詳情

DESCRIPTION/FEATURES

□ HermeticallySealed Glass Packages (DO-35)

□ High Reverse Breakdown and Low Leakage

□ Excellent Low VoltageRegulation

□ Controlled Stored Charge

□ Planar Passivated Die Elements

APPLICATION

These axial lead diodes represent configurations of one to four* p-n junctions in series which may be used in any application requiring light tolerance, low voltage levels versus current. This method of low voltage regulation is comparitively superior in dynamic impedence (voltage change versus current) than low voltage zeners where tunneling instead of avalanche current is dominant. Typical applications include use as signal limiters, level shifters in transistor logic, meter protectors, and low voltage regulators. For computer circuit applications, a controlled stored charge selection is provided as well.

In addition, these devices may be used for temperature compensation wherein each p-n junction contributes approximately -2 mV/°C each.

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