零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
INA111BU | High Speed FET-Input INSTRUMENTATION AMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | |
INA111BU | High Speed FET-Input INSTRUMENTATION AMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | |
High Speed FET-Input INSTRUMENTATION AMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
IndustrialminitypeEthernettofiberPoEmediaconverter | ORING ORing Industrial Networking Corp | ORING | ||
MultipleSmall-SignalTransistors | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOSField-EffectTransistors N-ChannelEnhancement-ModePowerField-EffectTransistors Features ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?Majoritycarrierdevice | GESS GE Solid State | GESS | ||
IM-CHANIMELPOWERMOSFETsTO-39PACKAGE TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
詳細(xì)參數(shù)
- 型號(hào):
INA111BU
- 功能描述:
儀表放大器 High Speed FET-Input Instrumentation Amp
- RoHS:
否
- 制造商:
Texas Instruments
- 輸入補(bǔ)償電壓:
150 V
- 最大輸入電阻:
10 kOhms
- 共模抑制比(最小值):
88 dB
- 工作電源電壓:
2.7 V to 36 V
- 電源電流:
200 uA
- 最大工作溫度:
+ 125 C
- 最小工作溫度:
- 40 C
- 封裝/箱體:
MSOP-8
- 封裝:
Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
BB |
21+ |
SOIC-16 |
2500 |
進(jìn)口原裝,優(yōu)勢現(xiàn)貨 |
詢價(jià) | ||
TI/德州儀器 |
24+ |
SOIC16 |
20000 |
熱賣優(yōu)勢現(xiàn)貨 |
詢價(jià) | ||
TI |
24+ |
SOIC16 |
5630 |
TI一級(jí)代理原廠授權(quán)渠道實(shí)單支持 |
詢價(jià) | ||
BB |
2020+ |
8000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | |||
TI/德州儀器 |
23+ |
SOIC16 |
18204 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) | ||
TI/德州儀器 |
21+ |
SOIC16 |
200 |
原裝現(xiàn)貨 |
詢價(jià) | ||
TI/德州儀器 |
23+ |
SOIC16 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
TI/德州儀器 |
22+ |
SOIC16 |
4000 |
詢價(jià) | |||
TI(德州儀器) |
22+ |
SOIC-16 |
99000 |
只做原裝 |
詢價(jià) | ||
Texas Instruments |
22+ |
SOIC16 |
18000 |
TI優(yōu)勢渠道,大量原裝庫存現(xiàn)貨,交期快,歡迎詢價(jià)。 |
詢價(jià) |
相關(guān)規(guī)格書
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