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INA230EVM

INA230EVMEvaluationBoardandSoftwareTutorial

TI1Texas Instruments

德州儀器

IRF230

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導體

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF230

8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF230

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFET

SEME-LAB

Seme LAB

IRF230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF230

HighPower,HighSpeedApplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF230

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFE230

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

PartNumberBVDSSRDS(on)ID IRFE230200V0.40?5.5A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst

IRF

International Rectifier

IRFE230

SimpleDriveRequirements

IRF

International Rectifier

IRFF230

5.5A,200V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF230

N-CHANNELENHANCEMENT

SEME-LAB

Seme LAB

IRFR230

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatest processingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedand

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFR230A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS230

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
TI/德州儀器
2122+
NA
60000
全新原裝正品現(xiàn)貨,假一賠十
詢價
TI/德州儀器
22+
QFN16
34137
只做原裝進口現(xiàn)貨
詢價
22+
NA
3
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詢價
TI
24+
20000
絕對原裝現(xiàn)貨
詢價
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實單可談/支持含稅拆樣
詢價
TI
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價
TI
24+
NA
9929
確保原裝正品,專注終端客戶一站式BOM配單
詢價
TI德州儀器
22+
DSBGA-12
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
詢價
TI/德州
2018+
DSBGA
32500
德州代理承諾銷售原裝正品公司可開正規(guī)17%增值稅票
詢價
TI
500
詢價
更多INA230AIRGTT/BKN供應商 更新時間2024-12-22 16:00:00