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IRF250

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

Intersil

Intersil Corporation

IRF250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF250

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

ETCList of Unclassifed Manufacturers

未分類制造商

IRF250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF250

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF250

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF250SMD

N.CHANNELPOWERMOSFET

FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFC250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFM250

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM250

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM2500.100?27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductan

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    INA250EVM

  • 制造商：

    Texas Instruments

  • 類別：

    開(kāi)發(fā)板，套件，編程器 > 評(píng)估板 - 運(yùn)算放大器

  • 包裝：

    散裝

  • 每 IC 通道數(shù)：

    1 - 單路

  • 放大器類型：

    電流檢測(cè)

  • 輸出類型：

    單端

  • 壓擺率：

    0.2V/μs

  • 電壓 - 供電，單/雙?(±)：

    2.7V ~ 36V

  • 板類型：

    完全填充

  • 所含物品：

    板

  • 使用的 IC/零件：

    INA250

  • 描述：

    EVAL BOARD FOR INA250

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Texas Instruments
24+
NA
24341
TI優(yōu)勢(shì)主營(yíng)型號(hào)-原裝正品
 詢價(jià)
TI
24+
SMD
17900
電源管理IC開(kāi)發(fā)工具
 詢價(jià)
TEXAS INSTRUMENTS
23+
NA
9600
全新原裝正品!一手貨源價(jià)格優(yōu)勢(shì)!
 詢價(jià)
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣
 詢價(jià)
TI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
TI(德州儀器)
2024+
N/A
500000
誠(chéng)信服務(wù),絕對(duì)原裝原盤
 詢價(jià)
TI德州儀器
22+
TSSOP16
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
TI/德州
2018+
TSSOP
32500
德州代理承諾銷售原裝正品公司可開(kāi)正規(guī)17%增值稅票
 詢價(jià)
TI
500
詢價(jià)
TI
23+
N/A
8000
只做原裝現(xiàn)貨
 詢價(jià)
更多INA250EVM供應(yīng)商 更新時(shí)間2025-3-14 17:36:00

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