午夜精品久久久蜜桃,av在线亚洲无码,国产国语精品2019精品

首頁 >IND330SK>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IND330SK	文件：1.68168 Mbytes Page：41 Pages	Long Distance Digital Display Link Transmitter & Receiver [InovaSemiconductors] GeneralDescription TheGigaSTaR?DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features:	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
INDR330B	文件：1.68168 Mbytes Page：41 Pages	LongDistanceDigitalDisplayLinkTransmitter&Receiver [InovaSemiconductors] GeneralDescription TheGigaSTaR?DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features:	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
INDT330B	文件：1.68168 Mbytes Page：41 Pages	LongDistanceDigitalDisplayLinkTransmitter&Receiver [InovaSemiconductors] GeneralDescription TheGigaSTaR?DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features:	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
IRF330	文件：208.64 Kbytes Page：5 Pages	N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
IRF330	文件：177.13 Kbytes Page：6 Pages	N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF330	文件：146.64 Kbytes Page：7 Pages	TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio	IRF International Rectifier	IRF
IRF330	文件：58.19 Kbytes Page：7 Pages	5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRF330	文件：96.83 Kbytes Page：3 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRF330	文件：59.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrentID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Highvoltage,highspeedapplications ?Off-lineswitchingpowersupplies,UPS,ACandDC motorco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF330	文件：848.7 Kbytes Page：3 Pages	N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF330	文件：848.7 Kbytes Page：3 Pages	IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF330	文件：848.7 Kbytes Page：3 Pages	IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFE330	文件：133.89 Kbytes Page：8 Pages	REPETITIVEAVALANCHEANDdv/dtRATED	IRF International Rectifier	IRF
IRFE330	文件：167.99 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF330	文件：326.63 Kbytes Page：7 Pages	3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET 3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa	Intersil Intersil Corporation	Intersil
IRFF330	文件：16.62 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealedTO39 N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=400V ID=3A RDS(ON)=1?	SEME-LAB Seme LAB	SEME-LAB
IRFF330	文件：1.0053 Mbytes Page：3 Pages	3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET 3.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFR330	文件：671.71 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR330A	文件：321.63 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR330B	文件：671.71 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

12 3 >>>

詳細(xì)參數(shù)

型號(hào)：
IND330SK
功能描述：
Long Distance Digital Display Link Transmitter & Receiver

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	IND400001	THOMOAS	23+	DIP	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IND49FCT3805APY	IDT	23+	PLCC	5000	原裝正品,假一罰十	詢價(jià)
深圳市能元時(shí)代電子有限公司	IND49FCT3805APY	IDT	23+	PLCC	66768	##公司主營品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IND-6.8uH-3.4A±20%(伍爾特74437346068)	伍爾特	23+	7.3X6.6X2.8MM	3200	絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購!	詢價(jià)
深圳誠思涵科技有限公司	IND60C32	INDIGITA	16+	BGA	762	進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!	詢價(jià)
深圳市振宏微科技有限公司	IND60C32	INDIGITA	23+	BGAQFP	8659	原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢(shì).	詢價(jià)
深圳市宏捷佳電子科技有限公司	IND60C32	INDIGITA	24+	BGA	6500	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)
深圳市維爾達(dá)電子有限公司	IND6X6,4.7UH		2023+		80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市佰諾德電子有限公司	IND80212	IND	2324+		3000	原裝正品,超低價(jià)出售	詢價(jià)
深圳市星佑電子有限公司	IND80C09	IND	05+	原廠原裝	5116	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)

更多IND330SK供應(yīng)商更新時(shí)間2024-12-23 11:10:00

詳細(xì)參數(shù)

相關(guān)規(guī)格書

相關(guān)庫存