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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IQXT-260	文件：317.39 Kbytes Page：4 Pages	TCXOSpecification	IQD IQD Frequency Products Ltd	IQD
IRF260	文件：438.62 Kbytes Page：7 Pages	N-ChannelPowerMOSFET	NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司	NELLSEMI
IRFB260	文件：90.7 Kbytes Page：8 Pages	PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A) SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent	IRF International Rectifier	IRF
IRFB260N	文件：90.7 Kbytes Page：8 Pages	PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A) SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent	IRF International Rectifier	IRF
IRFB260N	文件：338.85 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFB260NPBF	文件：167 Kbytes Page：8 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free	IRF International Rectifier	IRF
IRFB260NPBF	文件：175.96 Kbytes Page：9 Pages	HighfrequencyDC-DCconverters	IRF International Rectifier	IRF
IRFI260	文件：135.18 Kbytes Page：4 Pages	TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*) 200Volt,0.060?,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan	IRF International Rectifier	IRF
IRFI260	文件：61.18 Kbytes Page：4 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFM260	文件：442.38 Kbytes Page：8 Pages	TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.060ohm,Id=35A*) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETs	IRF International Rectifier	IRF
IRFM260	文件：189.74 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFP260	文件：122.69 Kbytes Page：8 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFP260	文件：36.08 Kbytes Page：2 Pages	StandardPowerMOSFET-N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes	IXYS IXYS Corporation	IXYS
IRFP260	文件：541.53 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP260	文件：443.71 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFP260	文件：1.79918 Mbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP260	文件：687.16 Kbytes Page：11 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP260M	文件：333.83 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ·DESCRITION ·HighSpeedPowerSwitching ·FEATURES ·Staticdrain-sourceon-resistance:RDS(on)≤40m? ·Enhancementmode: ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFP260MPBF	文件：641.1 Kbytes Page：8 Pages	HEXFET?PowerMOSFET VDSS=200V RDS(on)=0.04? ID=50A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETP	IRF International Rectifier	IRF
IRFP260MPBF	文件：641.1 Kbytes Page：8 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	IOR260SN	IR	23+	QFN	3000	一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價(jià)
深圳市河鋒鑫科技有限公司	IOR260SN	IR	22+	QFN	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IOR260SN	IR	23+	QFN	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IOR260SN	IR	23+	QFN	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IOR260SN	IR	23+	QFN	7000		詢價(jià)
深圳市近平電子有限公司	IOR3037	IOR	10+	SOP-8	6000	絕對(duì)原裝自己現(xiàn)貨	詢價(jià)
深圳市富芯樂(lè)電子科技有限公司	IOR3037	IOR	22+	SOP-8	500	只做全新原裝貨	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IOR3037A	IOR	24+	SOP-8	135		詢價(jià)
深圳市佳鑫美電子科技有限公司	IOR3037A	IR	24+	SMD	3200	絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電!	詢價(jià)
深圳市博浩通科技有限公司	IOR3037A	IOR	23+	SOP8	9980	價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢	詢價(jià)

更多IOR260SN供應(yīng)商更新時(shí)間2025-1-8 11:09:00

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