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IRFP240

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=20A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP240

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP240

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP240

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP240

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

KERSEMI

Kersemi Electronic Co., Ltd.

IRFP240

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP240

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP240

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP240A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.18? ID=20A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10μA(Max.)@VDS=200V LowerRDS(ON):0.144?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP240A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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更多IP-240-CY供應(yīng)商 更新時(shí)間2025-3-13 16:30:00