首頁(yè) >IPB04N03LAG>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPB04N03LAG | OptiMOS?2 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSBuckconverterseries | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor PackageMarking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSBuckconverterseries | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào):
IPB04N03LAG
- 功能描述:
MOSFET N-CH 25 V 80 A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-263 |
8498 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢(xún)價(jià) | ||
INFINEON |
2012+ |
TO-263 |
12000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢(xún)價(jià) | ||
INFINEON |
24+ |
D2PAK(TO-263) |
8866 |
詢(xún)價(jià) | |||
Infineon |
24+ |
TO-263 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
INFINEON |
24+ |
TO-263 |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
詢(xún)價(jià) | ||
Infineo |
21+ |
TO-263 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢(xún)價(jià) | ||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢(xún)價(jià) | ||
INFINEON |
2023+ |
D2PAK(TO |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) |
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