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IPB057N08N3G

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3-G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI057N08N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP057N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP057N08N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP057N08N3G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP057N08N3-G

OptiMOS3Power-TransistorFeaturesN-channel,normallevel

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPB057N08N3G

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    OptiMOS3 Power-Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
2022+
TO-263
18000
原廠代理 終端免費提供樣品
 詢價
INF
23+
TO-263
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
INF
23+
TO-263
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON/英飛凌
24+
TO263
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
INF
23+
TO-263
7000
詢價
infineon
23+
TO-263
3000
原裝正品假一罰百!可開增票!
 詢價
Infineon
23+
TO263-3
6000
原裝正品，支持實單
 詢價
Infineon/英飛凌
24+
20000
全新、原裝、現(xiàn)貨
 詢價
INFINEON/英飛凌
22+
TO263-3
92495
詢價
Infineon
24+
TO263-3
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多IPB057N08N3G供應(yīng)商 更新時間2025-3-11 14:00:00

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