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IIPP60R125C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustd

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPW60R125C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤125m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R125C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications ?Loadswitch ?Powermanagement

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPB60R125C6XT

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    MOSFET N-CH 600V 30A TO263

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
英飛凌
21+
PG-TO263-3
6000
絕對原裝現(xiàn)貨
 詢價
Infineon(英飛凌)
2447
PG-TO263-3
115000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Infineon/英飛凌
21+
PG-TO263-3
6000
原裝現(xiàn)貨正品
 詢價
Infineon/英飛凌
2021+
PG-TO263-3
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
2023+
PG-TO263-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
Infineon/英飛凌
24+
PG-TO263-3
30000
原裝正品公司現(xiàn)貨,假一賠十!
 詢價
Infineon/英飛凌
21+
PG-TO263-3
6820
只做原裝,質(zhì)量保證
 詢價
Infineon/英飛凌
21+
PG-TO263-3
13880
公司只售原裝,支持實單
 詢價
更多IPB60R125C6XT供應(yīng)商 更新時間2025-2-24 15:00:00

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