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IIPA60R125P6

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPP60R125P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPW60R125P6

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA60R125P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R125P6

IncreasedMOSFETdv/dtruggedness

MOSFET MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS?P6PowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom ??andUPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R125P6

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPP60R125P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPP60R125P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R125P6

IncreasedMOSFETdv/dtruggedness

MOSFET MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS?P6PowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom ??andUPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R125P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R125P6

IncreasedMOSFETdv/dtruggedness

MOSFET MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS?P6PowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom ??andUPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R125P6

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPX60R125P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPZ60R125P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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INFINEON
23+
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8000
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INFINEON
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7000
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INFIEON
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TO266
6500
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英飛凌
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PG-TO263-3
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Infineon(英飛凌)
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PG-TO263-3
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INFINEON
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PG-TO263-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
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Infineon(英飛凌)
23+
TO263
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
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2023
NA
2580
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Infineon
23+
10000
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INFINEON
17+
TO-263
6200
100%原裝正品現(xiàn)貨
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更多IPB60R125P6供應(yīng)商 更新時(shí)間2024-11-16 15:00:00