首頁 >IPB60R650CE>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600VCoolMOS?CEPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
600VCoolMOS?CEPowerTransistor Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600VCoolMOS?CEPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
600VCoolMOS?CEPowerTransistor Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
600VCoolMOS?CEPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600VCoolMOS?CEPowerTransistor 600VCoolMOSaCEPowerTransistor Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEos ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications Applications ??PFCstages,hardswitching | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
600V0.65?N-channelMOSFET ?Description MMD60R650RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.65?N-channelMOSFET ?Description MMD60R650RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.65?N-channelMOSFET ?Description MMHS60R650RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMI | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.65?N-channelMOSFET ?Description MMHS60R650RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMI | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導體有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導體有限公司 | MAPLESMI |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-263 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
TO-263 |
7000 |
詢價 | |||
INFINEON |
24+ |
D2PAK(TO-263) |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
Infineon |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Infineon(英飛凌) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Infineon(英飛凌) |
23+ |
N/A |
589610 |
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理! |
詢價 |
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