首頁 >IPC90R340C3>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor ?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.34? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤340m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?WorldwidebestRDS,oninTO220Fullpak ?Ultralowgatecharge CoolMOS?900Visdesignedfor: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=900V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.34Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicati | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.34Ω(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)forindustrialapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?WorldwidebestRDS,oninTO262(I2Pak) ?Ultralowgatecharge CoolMOS?900Visdesignedfor: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.34? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?WorldwidebestRDS,oninTO220 ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?Quasi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤340m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRonxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOSCPisdesignedfor: ?QuasiResonantFlyback/Forwardt | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數(shù)
- 型號:
IPC90R340C3
- 功能描述:
MOSFET COOLM
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon |
24+ |
TO220-3 |
17900 |
MOSFET管 |
詢價 | ||
INFINEON |
1809+ |
SMD |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon Technologies |
22+ |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | |||
Infineon Technologies |
21+ |
13880 |
公司只售原裝,支持實單 |
詢價 | |||
Infineon Technologies |
23+ |
9000 |
原裝正品,支持實單 |
詢價 | |||
INFINEON |
23+ |
- |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
- |
7000 |
詢價 | |||
Axiomtek |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
TOSHIBA/東芝 |
23+ |
QFN |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
VIMICRO |
23+ |
網(wǎng)絡攝像機 |
5000 |
原裝正品,假一罰十 |
詢價 |
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- IPD031N03L G
- IPD031N03L-G
- IPD031N03LGBTMA1
- IPD031N03M-G
- IPD031N06L3 G
- IPD031N06L3GATMA1
- IPD034N06N3G
- IPD035N06L3 G
- IPD035N06L3GATMA1
- IPD036N04LG
- IPD038N04N G
- IPD038N04NGBTMA1
- IPD038N06N3 G
- IPD038N06N3GATMA1
- IPD03N03LA G
- IPD03N03LAGXT
- IPD03N03LB G
- IPD03N03LBGXT
- IPD040N03LG
- IPD040N03LGATMA1
- IPD040N03LGHF
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- IPD042P03L3G
- IPD042P03L3GXT
- IPD048N06L3 G
- IPD048N06L3GBTMA1
- IPD04N03LA
- IPD04N03LAG
- IPD04N03LB G
- IPD04N03LBGXT
- IPD050N03L G
- IPD050N03LG
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- IPD053N06NXTMA1
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- IPD031N03M G
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- IPD038N06N3G
- IPD03N03LA
- IPD03N03LAG
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- IPD03N03LBG
- IPD040N03L G
- IPD040N03LG_10
- IPD040N03LGBTMA1
- IPD040N03LGNT
- IPD042P03L3 G
- IPD042P03L3GBTMA1
- IPD048N06L3
- IPD048N06L3G
- IPD04N03L
- IPD04N03LA G
- IPD04N03LAGXT
- IPD04N03LBG
- IPD050N03L
- IPD050N03L_08
- IPD050N03LGATMA1
- IPD050N03LGNT
- IPD053N06N3 G
- IPD053N06N3GBTMA1
- IPD053N06NATMA1
- IPD053N08N3 G
- IPD053N08N3GBTMA1