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ISPD02N60S5

N-ChannelMOSFETTransistor

?DESCRITION ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPP02N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPB02N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB02N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB02N60S5

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPB02N60S5

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPD02N60S5

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPD02N60S5

N-ChannelMOSFETTransistor

?DESCRITION ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPD02N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN02N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應商型號品牌批號封裝庫存備注價格
INFINEO
2020+
TO-252
1700
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
 詢價
INF
2022+
TO-252
3500
原廠代理 終端免費提供樣品
 詢價
INF
TO-252
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
INFINEON
23+
TO-252
6000
原裝正品，支持實單
 詢價
INF
2022+
TO-252
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
INF
20+
TO-252
3500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
INFINEO
2020+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
INFINEON
16+
TO-252
90
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON
2022+
TO-252
57550
詢價
更多IPD02N60S5供應商 更新時間2025-2-6 13:58:00

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