首頁(yè) >IPD060N03LGXT>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
OptiMOS??Power-TransistorFeaturesFastswitchingMOSFETforSMPS OptiMOS?3Power-Transistor Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??Power-TransistorFeaturesFastswitchingMOSFETforSMPS OptiMOS?3Power-Transistor Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS??Power-TransistorFeaturesFastswitchingMOSFETforSMPS OptiMOS?3Power-Transistor Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF060N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司 | TUOFENG | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF060N03NusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司 | TUOFENG | ||
N-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
30VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
30VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
30VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
30VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC |
詳細(xì)參數(shù)
- 型號(hào):
IPD060N03LGXT
- 制造商:
Infineon Technologies AG
- 功能描述:
N-KANAL POWER MOS - Cut TR(SOS)
- 制造商:
Infineon Technologies
- 功能描述:
Infineon Technologies IPD060N03LGXT MOSFETs
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
2021+ |
SMD |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢(xún)價(jià) | ||
INFINEON |
21+ |
N/A |
2500 |
進(jìn)口原裝,優(yōu)勢(shì)現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINEON |
50 |
詢(xún)價(jià) | |||||
INFINEON |
24+ |
con |
50 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index |
詢(xún)價(jià) | ||
INFINEON |
2326+ |
3050 |
只做原裝正品,支持實(shí)單 |
詢(xún)價(jià) | |||
INFINEON |
24+ |
con |
2500 |
優(yōu)勢(shì)庫(kù)存,原裝正品 |
詢(xún)價(jià) | ||
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢(xún)價(jià) | |||
INFINEON/英飛凌 |
22+ |
TO-252 |
20000 |
深圳原裝現(xiàn)貨正品有單價(jià)格可談 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-252 |
10000 |
詢(xún)價(jià) | |||
INFINEON/英飛凌 |
23+ |
TO-252 |
20000 |
原裝正品 歡迎咨詢(xún) |
詢(xún)價(jià) |
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