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IIPA030N10N3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Deviceforuseinawidevarietyofapplications ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)≤3m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP030N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA030N10N3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Deviceforuseinawidevarietyofapplications ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)≤3m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA030N10N3G

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA030N10N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA030N10N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI030N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI030N10N3G

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI030N10N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP030N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP030N10N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPI030N10N3 G

  • 功能描述:

    MOSFET N-KANAL POWER MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
23+
TO-262
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
INFINEON
2023+
TO-262
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
INFINEON
24+
TO-262
35200
一級(jí)代理/放心采購
詢價(jià)
INFINEON
09+
TO-262
4000
普通
詢價(jià)
Infineon(英飛凌)
2112+
PG-TO262-3
115000
500個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
詢價(jià)
Infineon/英飛凌
21+
PG-TO262-3
6000
原裝現(xiàn)貨正品
詢價(jià)
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
Infineon/英飛凌
21+
PG-TO262-3
10000
原裝,品質(zhì)保證,請(qǐng)來電咨詢
詢價(jià)
infineon
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
Infineon/英飛凌
2021+
PG-TO262-3
9600
原裝現(xiàn)貨,歡迎詢價(jià)
詢價(jià)
更多IPI030N10N3 G供應(yīng)商 更新時(shí)間2025-1-2 14:05:00