訂購數(shù)量 | 價(jià)格 |
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首頁>IPI65R380C6>詳情
IPI65R380C6_INFINEON/英飛凌_MOSFET N-CH 650V 10.6A TO262深圳達(dá)恩科技
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
IPI65R380C6
- 功能描述:
MOSFET N-CH 650V 10.6A TO262
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
CoolMOS™
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商
- 企業(yè):
深圳市達(dá)恩科技有限公司
- 商鋪:
- 聯(lián)系人:
劉小姐
- 手機(jī):
13510619928
- 詢價(jià):
- 電話:
0755-23917962
- 地址:
深圳市福田區(qū)華強(qiáng)北新亞洲國利大廈1515
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