IPL65R115CFD7中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

The latest 650 V CoolMOS? CFD7 extends the voltage class offering of

the CFD7 family and is a successor to the 650 V CoolMOS? CFD2.

Resulting from improved switching performance and excellent thermal

behavior, 650 V CooMOS? CFD7 offers highest efficiency in resonant

switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As

part of Infineon’s fast body diode portfolio, this new product series blends

all advantages of a fast switching technology together with superior hard

commutation robustness. The CoolMOS? CFD7 technology meets

highest efficiency and reliability standards and furthermore supports high

power density solutions.

Features

? Ultra-fast body diode

? 650V break down voltage

? Best-in-class RDS(on)

? Reduced switching losses

? Low RDS(on) dependency over temperature

Benefits

? Excellent hard commutation ruggedness

? Extra safety margin for designs with increased bus voltage

? Enabling increased power density solutions

? Outstanding light load efficiency in industrial SMPS applications

? Improved full load efficiency in industrial SMPS applications

? Price competitiveness over previous CoolMOS? families

Potential applications

Suitable for Soft Switching topologies

Optimized for phase-shift full-bridge (ZVS), LLC Applications – Server,

Telecom, EV Charging, Solar

Product validation

Fully qualified according to JEDEC for Industrial Applications

Please note: The source and sense source pins are not exchangeable.

Their exchange might lead to malfunction. For paralleling 4pin MOSFET

devices the placement of the gate resistor is generally recommended to be

on the Driver Source instead of the Gate.