IPLK70R600P7分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-單個(gè)規(guī)格書PDF中文資料

IPLK70R600P7屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-單個(gè)。由英飛凌科技股份公司制造生產(chǎn)的IPLK70R600P7晶體管 - FET，MOSFET - 單個(gè)分立式場(chǎng)效應(yīng)晶體管 (FET) 廣泛用于功率轉(zhuǎn)換、電機(jī)控制、固態(tài)照明及其他應(yīng)用，它們具有高頻開關(guān)特性，同時(shí)又能承載大電流，使其在這些應(yīng)用中具備一定優(yōu)勢(shì)。這類晶體管廣泛應(yīng)用于要求額定電壓為幾百伏或更低的應(yīng)用，如果超出該額定電壓值，則 IGBT 等其他器件更具競(jìng)爭(zhēng)力。

CoolMOS? is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle and

pioneered by Infineon Technologies.

The latest CoolMOS? P7 is an optimized platform tailored to target cost

sensitive applications in consumer markets such as charger, adapter,

lighting, TV, etc.

The new series provides all the benefits of a fast switching Superjunction

MOSFET, combined with an excellent price/performance ratio and state of

the art ease-of-use level. The technology meets highest efficiency

standards and supports high power density, enabling customers going

towards very slim designs.

Features

? Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

? Excellent thermal behavior

? Integrated ESD protection diode

? Low switching losses (Eoss)

? Fully qualified acc. JEDEC for Industrial Applications

Benefits

? Cost competitive technology

? Lower temperature

? High ESD ruggedness

? Enables efficiency gains at higher switching frequencies

? Enables high power density designs and small form factors

Potential applications

Recommended for Flyback topologies in Chargers and Adapters

Please note: For MOSFET paralleling the use of ferrite beads on the gate

or seperate totem poles is generally recommended.