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BSC034N03

N-Ch30VFastSwitchingMOSFETs

Features ?AdvancedTrenchMOSTechnology ?LowGateCharge ?LowRDS(ON) ?100EASGuaranteed ?GreenDeviceAvailable Applications ?PowerManagementinDesktopComputeror DC/DCConverters. ?IsolatedDC/DCConvertersinTelecomand Industrial.

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

BSC034N03LSG

OptiMOS??Power-MOSFET

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel;Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?Avalanc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP034N03L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB034N03L

OptiMOS??Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;Ro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB034N03LG

OptiMOS??Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;Ro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB034N03L-G

OptiMOS??Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;Ro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP034N03L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP034N03LG

OptiMOS??Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;Ro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    IPP034N03L G

  • 功能描述:

    MOSFET N-CH 30V 80A 3.4mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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INFINEO
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英飛凌
21+
PG-TO220-3
6000
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INF
23+
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全新原裝現(xiàn)貨,價格優(yōu)勢
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更多IPP034N03L G供應商 更新時間2024-12-22 14:04:00