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首頁(yè) >IPP075N15N3IC>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel150-V(D-S)MOSFET KeyFeatures: ?LowrDS(on)trenchtechnology ?Lowthermalimpedance ?Fastswitchingspeed | AnalogPower Analog Power | AnalogPower | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS3Power-Transistor Features ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤7.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
3Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
750 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
8000 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
8000 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
7000 |
詢(xún)價(jià) | |||
INFINEON/英飛凌 |
TO-220 |
22+ |
10326 |
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO220 |
10000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
NA/ |
3291 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢(xún)價(jià) | ||
INFINEON |
15+ |
TO-220 |
30 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) |
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