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IPP65R380C6中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IPP65R380C6
廠商型號(hào)

IPP65R380C6

功能描述

Metal Oxide Semiconductor Field Effect Transistor

文件大小

1.95871 Mbytes

頁(yè)面數(shù)量

19 頁(yè)

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡(jiǎn)稱(chēng)

Infineon英飛凌

中文名稱(chēng)

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-13 12:00:00

IPP65R380C6規(guī)格書(shū)詳情

Description

CoolMOS? is a revolutionary technology for high voltage power

MOSFETS, designed according to the superjunction (SJ) principle

and pioneered by Infineon Technologies. CoolMOS? C6 series combines

the experience of the leading SJ MOSFET supplier with high class

innovation. The resulting devices provide all benefits of a fast switching

SJ MOSFET while not sacrificing ease of use. Extremely low switching

and conduction losses make switching applications even more efficient,

more compact, lighter, and cooler.

Features

? Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive

Qualified for industrial grade applications according to JEDEC1)

Pb-free plating, available in Halogen free mold compound2)

產(chǎn)品屬性

  • 型號(hào):

    IPP65R380C6

  • 功能描述:

    MOSFET 650V CoolMOS C6 Power Transistor

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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