亚洲国产高清在线,久久精品国产国产精品四凭

首頁(yè) >IPP65R420CFD>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IPP65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650V CoolMOS C6 CFD Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R420CFD	文件：4.60565 Mbytes Page：21 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
65R420	文件：461.65 Kbytes Page：6 Pages	11A竊?50VN-CHANNELMOSFET	KIAKIA Semiconductor Technology 可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司	KIA
IIPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IIPW65R420CFD	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤420m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPA65R420CFD	文件：270.11 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicati	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPA65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R420CFD	文件：189.44 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPB65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R420CFDA	文件：1.31097 Mbytes Page：14 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R420CFD	文件：331.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IPI65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R420CFD	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤420m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

12 >>>

詳細(xì)參數(shù)

型號(hào)：
IPP65R420CFD
功能描述：
MOSFET N-CH 650V 8.7A TO220
RoHS：
是
類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
系列：
CoolMOS™
標(biāo)準(zhǔn)包裝：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金屬氧化物 FET
特點(diǎn)：
邏輯電平門(mén)
漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
C：
18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25°
C：
180 毫歐 @ 9A，10V Id 時(shí)的
Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
Vgs：
72nC @ 10V 輸入電容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安裝類型：
通孔
封裝/外殼：
TO-220-3 整包
供應(yīng)商設(shè)備封裝：
TO-220FP
包裝：
管件

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市英科美電子有限公司	IPP65R420CFD	INFINEON/英飛凌	2021+	TO-220	17593	原裝進(jìn)口假一罰十	詢價(jià)
深圳市明嘉萊科技有限公司	IPP65R420CFD	INFINEON TECHNOLOGIES AG	23+	SMD	918000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市高捷芯城科技有限公司	IPP65R420CFD	Infineon(英飛凌)	23+	TO-220	8145	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IPP65R420CFD	INFINEON	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IPP65R420CFD	INFINEON	2016+	TO-220	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價(jià)
深圳市卓越微芯電子有限公司	IPP65R420CFD	INFINEO	2020+	TO220	30	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
IPP65R420CFD	英飛凌	21+	PG-TO220-3	6000	絕對(duì)原裝現(xiàn)貨	詢價(jià)
艾睿國(guó)際（香港）有限公司	IPP65R420CFD	Infineon(英飛凌)	2112+	PG-TO220-3	105000	500個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期	詢價(jià)
深圳市晴軒時(shí)代電子有限公司	IPP65R420CFD	Infineon/英飛凌	21+	PG-TO220-3	8800	公司只作原裝正品	詢價(jià)
深圳市杰順創(chuàng)科技有限公司	IPP65R420CFD	Infineon/英飛凌	21+	PG-TO220-3	6000	原裝現(xiàn)貨正品	詢價(jià)

更多IPP65R420CFD供應(yīng)商更新時(shí)間2024-12-23 8:36:00

詳細(xì)參數(shù)

相關(guān)規(guī)格書(shū)

相關(guān)庫(kù)存