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IPS06N03LZG

Ideal for high-frequency dc/dc converters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU06N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDECfortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU06N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDECfortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU06N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU06N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU06N03LB

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU06N03LZ

Idealforhigh-frequencydc/dcconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU06N03LZG

Idealforhigh-frequencydc/dcconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NDT06N03

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

PJ06N03D

25VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJD06N03

25VN-ChannelEnhancementModeMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@30A=6m? ?RDS(ON),VGS@4.5V,IDS@30A=9m? ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUitraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

SPD06N03LA

N-Channel20-V(D-S)175CMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPS06N03LZG

  • 功能描述:

    MOSFET N-KANAL POWER MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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INFINEON
24+
IPAKSL(TO-251SL)
8866
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INFINE0N
23+
TO-251
11846
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TO-220F
6430
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INFINEON
1503+
TO251-3
3000
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INFINEON/英飛凌
23+
TO-251
10000
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Infineon
22+
NA
2118
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Infineon Technologies
22+
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9000
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Infineon Technologies
21+
TO2513 Stub Leads IPak
13880
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INFINEON/英飛凌
23+
TO-251-3
12888
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Infineon Technologies
23+
TO2513 Stub Leads IPak
9000
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更多IPS06N03LZG供應(yīng)商 更新時(shí)間2024-12-24 10:50:00