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IPW60R165CP

N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤165m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW60R165CP

CoolMOS Power Transistor

CoolMOS?PowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R165CP

CoolMOS? Power Transistor Features Lowest figure-of-merit RONxQg Ultra low gate charge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R165CP_08

CoolMOS? Power Transistor Features Lowest figure-of-merit RONxQg Ultra low gate charge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP60R165CP

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.165? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPW60R165CP

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤165m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R165CP

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R165CP

CoolMosPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R165CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) ?Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: ?Hards

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R165CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingtopologiesforServer

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R165CP

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Ultra-fastbodydiode ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?PFCstages,hardswit

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI60R165CP

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.165? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI60R165CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: ?HardswitchingtopologiesforServerandTelec

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R165CP

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.165? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R165CP

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R165CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingtopologiesforServer

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    IPW60R165CP

  • 功能描述:

    MOSFET COOL MOS PWR TRANS 650V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO-247
65400
詢價
INFINEON/英飛凌
2021+
TO-247
18534
原裝進(jìn)口假一罰十
詢價
INFINEON
1550CN
TO-247
2580
原廠直銷
詢價
INFINEON
2021+
TO-247
9450
原裝現(xiàn)貨。
詢價
INFINEON/英飛凌
24+
TO-247
223
只做原廠渠道 可追溯貨源
詢價
INFINEON/英飛凌
19+/20+
TO247
9892
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
INFINEON/英飛凌
2021+
TO-247
12000
勤思達(dá) 只做原裝 現(xiàn)貨庫存
詢價
INFINEON TECHNOLOGIES AG
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
詢價
Infineon/英飛凌
23+
TO-247
70000
全新原裝現(xiàn)貨特價銷售,歡迎來電查詢
詢價
更多IPW60R165CP供應(yīng)商 更新時間2024-12-30 15:42:00