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IPW60R199CP

N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤199m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPW60R199CP

CoolMOS Power Transistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServer

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R199CP

CoolMOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R199CP

CoolMOS? Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R199CP_08

CoolMOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R199CP_14

CoolMOS? Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPA60R199CP

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.199? ?Highpeakcurrentcapability ?Enhancementmode ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?HardswitchingSMPStopologies

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPP60R199CP

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.199? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPW60R199CP

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤199m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA60R199CP

CoolMosPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: ?HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R199CP

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.199? ?Highpeakcurrentcapability ?Enhancementmode ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?HardswitchingSMPStopologies

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPB60R199CP

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPB60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R199CP

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R199CPA

CoolMOSPowerTransistor

Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?AutomotiveAECQ101qualified ?Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: ?DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI60R199CP

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.199? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPI60R199CP

CoolMOS?PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPW60R199CP

  • 功能描述:

    MOSFET COOL MOS PWR TRANS MAX PWR 650V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
TO-3P
10000
原裝正品公司現(xiàn)貨
詢價(jià)
INFINEO
2020+
TO-3P
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
INFINEON/英飛凌
24+
TO-247
1356
只做原廠渠道 可追溯貨源
詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
Infineon(英飛凌)
23+
TO-247
7962
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢價(jià)
Infineon(英飛凌)
23+
25650
新到現(xiàn)貨,只做原裝進(jìn)口
詢價(jià)
INFINEON
2022
TO-247
240
原廠原裝正品,價(jià)格超越代理
詢價(jià)
Infineon
17+
TO-247
6200
詢價(jià)
Infineon
17+
TO220-3
17900
MOSFET管
詢價(jià)
INFINEON
23+
PG-TO247-3-1
8600
全新原裝現(xiàn)貨
詢價(jià)
更多IPW60R199CP供應(yīng)商 更新時(shí)間2024-10-26 8:02:00