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IPW65R080CFD

Marking:65F6080;Package:PG-TO247;650V CoolMOS CFD Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R080CFD

N-Channel MOSFET Transistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤80m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW65R080CFD

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R080CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R080CFD_11

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

65R080CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPW65R080CFD

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤80m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TPV65R080C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPW65R080C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

詳細(xì)參數(shù)

  • 型號:

    IPW65R080CFD

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO-247
12000
原裝現(xiàn)貨,假一賠十,深圳現(xiàn)貨。
詢價
INFINEON
23+
TO-247
16500
一級分銷商!
詢價
INFINEON
22+
TO-247
4680
原裝正品可支持驗貨,歡迎咨詢
詢價
INFINEON
21+
TO-247
17490
原裝現(xiàn)貨、工廠庫存
詢價
INFINEON
24+
TO-247
10000
英飛凌代理渠道,只做原裝QQ:2369405325
詢價
INFINEON
2020+
TO-247
18200
原裝正品,誠信經(jīng)營。
詢價
INFINEON/英飛凌
2021+
TO-247
18069
原裝進口假一罰十
詢價
INFINEON
1553CN
TO-247
10080
原廠直銷
詢價
INFINEON/英飛凌
21+
TO-247
2400
原裝現(xiàn)貨假一罰十
詢價
INFINEON
21+
TO -247
7200
全新原裝公司現(xiàn)貨
詢價
更多IPW65R080CFD供應(yīng)商 更新時間2025-1-20 17:26:00