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IRF120

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF120

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF120

NanosecondSwitchingSpeeds

DESCRIPTION ?DrainCurrentID=8A@TC=25℃ ?DrainSourceVoltage-:VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.3Ω(Max) ?NanosecondSwitchingSpeeds APPLICATIONS ?Switchingpowersupplies ?Motorcontrols,InvertersandChoppers ?Audioamplifiersandhighenergypul

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF120

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRFD120

1.3A,100V,0.300Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFD120

PowerMOSFET(Vdss=100V,Rds(on)=0.27ohm,Id=1.3A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

IRFD120

1.3A,100V,0.300Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFD120

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecomb

VishayVishay Siliconix

威世科技威世科技半導體

IRFD120

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IQDN-120

  • 制造商：

    BOWEI

  • 制造商全稱：

    BOWEI

  • 功能描述：

    IQDN series I/Q demondulator

供應商型號品牌批號封裝庫存備注價格
BOWEI
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IQD
500
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IQD
24+
35200
一級代理/放心采購
 詢價
Infineon
23+
PG-TSON-8
15500
英飛凌優(yōu)勢渠道全系列在售
 詢價
Infineon(英飛凌)
2447
PG-TSON-8
315000
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
Infineon/英飛凌
2021+
PG-TSON-8
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
2023+
PG-TSON-8
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
Infineon/英飛凌
24+
PG-TSON-8
30000
原裝正品公司現(xiàn)貨,假一賠十!
 詢價
Infineon/英飛凌
21+
PG-TSON-8
6820
只做原裝,質量保證
 詢價
Infineon/英飛凌
21+
PG-TSON-8
13880
公司只售原裝,支持實單
 詢價
更多IQDN-120供應商 更新時間2025-3-14 18:33:00

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