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首頁 >IQXO-624>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IQXO-624	文件：207.72 Kbytes Page：2 Pages	Crystal Clock Oscillator Specification	IQD IQD Frequency Products Ltd	IQD
IRF624	文件：874.76 Kbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF624	文件：149.94 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624	文件：45.23 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=1.1Ω ?3.8Aand250V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfe	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF624	文件：159.2 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624A	文件：220.79 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowRDS(ON):0.742?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF624B	文件：874.76 Kbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF624PBF	文件：283.78 Kbytes Page：9 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF624PBF	文件：149.94 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624S	文件：191.31 Kbytes Page：6 Pages	HEXFETPowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?availableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAval	IRF International Rectifier	IRF
IRF624S	文件：180.04 Kbytes Page：9 Pages	AvailableinTapeandReel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624S	文件：217.97 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624SPBF	文件：1.7542 Mbytes Page：9 Pages	HEXFET?PowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?availableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAval	IRF International Rectifier	IRF
IRF624SPBF	文件：217.97 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI624B	文件：666.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI624G	文件：170.86 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.4A) Through-HolePackags TO-220FullPak(FullyIsolated)	IRF International Rectifier	IRF
IRFI624G	文件：1.38544 Mbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI624GPBF	文件：289.53 Kbytes Page：8 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFI624GPBF	文件：1.38544 Mbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFS624A	文件：59.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
貿(mào)澤芯城（深圳）電子科技有限公司	IQXO-626-BE-50.000000MHZ	C-MAC	23+	DIP-4	10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市創(chuàng)新跡電子有限公司	IQXO-626-BE-50.000000MHZ	C-MAC	23+	DIP-4	6500	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	IQXO-626-BE-50.000000MHZ	C-MAC	23+	DIP-4	6500	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
艾睿國際（香港）有限公司	IQXO-71	N/A	2021+	SMD	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市一線半導(dǎo)體有限公司	IQZ6-0002	A	24+	b	6		詢價
深圳市宏德偉創(chuàng)科技有限公司	IR#IRFD110PBF	IR	23+	TO-220	8000	原裝正品	詢價
深圳市河鋒鑫科技有限公司	IR/137110	IR	22+	TO220	6000	終端可免費(fèi)供樣,支持BOM配單	詢價
天津市博通航睿技術(shù)有限公司	IR/137110	IR	23+	TO220	7000		詢價

更多IQXO-624供應(yīng)商更新時間2024-10-26 14:33:00

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