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IRF130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF130

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF130

14A,100V,0.160Ohm,N-ChannelPowerMOSFET

14A,100V,0.160Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

Intersil

Intersil Corporation

IRF130

TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.18ohm,Id=14A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors. Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF130

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF130

HighPower,HighSpeedApplications

DESCRIPTION ?DrainCurrentID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS

Features: ?RepetitiveAvalancheRatings ?Dynamicdv/dtRating ?HermeticallySealed ?SimpleDriveRequirements ?EaseofParalleling

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF130

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF130SMD

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFE130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE130

SimpleDriveRequirements

IRF

International Rectifier

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF130

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

GESS

GE Solid State

IRFF130

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFF130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFF130

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFN130SMD

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFNJ130N

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

詳細(xì)參數(shù)

  • 型號：

    IR130CSPTRPBF

  • 功能描述：

    肖特基二極管與整流器 1.0 Amp 30 Volt

  • RoHS：

    否

  • 制造商：

    Skyworks Solutions, Inc.

  • 產(chǎn)品：

    Schottky Diodes

  • 峰值反向電壓：

    2 V

  • 正向連續(xù)電流：

    50 mA

  • 配置：

    Crossover Quad

  • 正向電壓下降：

    370 mV

  • 最大功率耗散：

    75 mW

  • 工作溫度范圍：

    - 65 C to + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOT-143

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
BGA
9365
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
IR
1923+
BGA
3000
絕對進(jìn)口原裝現(xiàn)貨
 詢價(jià)
IR
23+
BGA
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價(jià)
IR
22+
BGA
8000
原裝正品支持實(shí)單
 詢價(jià)
IR
22+
BGA
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
2023+環(huán)保現(xiàn)貨
BGA
60000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
INFINEON/英飛凌
23+
BGA
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
IR
23+
BGA
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
BGA
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
BGA
7000
詢價(jià)
更多IR130CSPTRPBF供應(yīng)商 更新時(shí)間2025-1-2 16:01:00

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