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IRF1404

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRF1404

AdvancedProcessTechnologyUltraLowOn-Resistance

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404

iscN-ChannelMosfetTransistor

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1404L

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRF

International Rectifier

IRF1404L

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404LPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404LPbF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

IRF1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404LPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404PBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

IRF

International Rectifier

IRF1404PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404S

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404S

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRF

International Rectifier

IRF1404S

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1404SPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

IRF1404SPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404STRLPBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO220
6000
終端可免費(fèi)供樣,支持BOM配單
詢價
IR
23+
TO220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
IR
23+
TO220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
IR
23+
TO220
7000
詢價
IR
22+
TO-220
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價
IR
22+
TO-220
21000
原廠原包裝。假一罰十??砷_13%增值稅發(fā)票。
詢價
INFINEON/英飛凌
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價
IR
23+
TO220
5000
原裝正品,假一罰十
詢價
IR
23+
TO220
25158
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
詢價
24+
SOP-8
149
詢價
更多IR1404供應(yīng)商 更新時間2025-1-18 10:00:00