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IRF250

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on) ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半導體

IRF250

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF250

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

Intersil

Intersil Corporation

IRF250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF250

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

ETCList of Unclassifed Manufacturers

未分類制造商

IRF250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF250

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF250

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF250SMD

N.CHANNELPOWERMOSFET

FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFC250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IR250-B

  • 制造商：

    Knoll Systems

  • 功能描述：

    Miniature Postage Stamp Infrared Receiver - Black

  • 制造商：

    KNOLL SYSTEMS

  • 功能描述：

    DWO IR REPEATER RECEIVER ONLYBLACK POSTAGE STAMP RECEIVER

供應商型號品牌批號封裝庫存備注價格
ir
24+
500000
行業(yè)低價,代理渠道
 詢價
IR
22+
NA+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
NA+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
NA+
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
NA+
7000
詢價
VISHAY
24+
TO-247
12000
VISHAY專營進口原裝現(xiàn)貨假一賠十
 詢價
IOR
20+
SOP-8
2960
誠信交易大量庫存現(xiàn)貨
 詢價
IRF
24+
DIP8
5000
詢價
IR
23+
DIP
3200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
IRF
23+
DIP8
5000
原裝正品,假一罰十
 詢價
更多IR250-B供應商 更新時間2025-1-30 8:20:00

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